BLC6G22-100 Datasheet, PDF (1/9 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1: Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation f
V_DS P_L(AV)
G_p
η_D IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 25
18
32
−37 ^[1]
ACPR
(dBc)
−40 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I_Dq of 950 mA:
x Output power = 25 W (AV)
x Gain = 18 dB
x Efficiency = 32 %
x IMD3 = −37 dBc
x ACPR = −40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (2000 MHz to 2200 MHz)
s Internally matched for ease of use