BLC6G20-75 Datasheet, PDF (1/9 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation f
V_DS P_L(AV) G_p
η_D ACPR₄₀₀ ACPR₆₀₀ EVM_rms
(MHz)
(V) (W) (dB) (%) (dBc) (dBc) (%)
CW
1930 to 1990 28 63 19 52 -
-
-
GSM EDGE
1930 to 1990 28 29.5 19 38.5 −62.5 −72
1.5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an I_Dq of 550 mA:
x Output power = 29.5 W (AV)
x Gain = 19 dB
x Efficiency = 38.5 %
x ACPR₄₀₀ = −62.5 dBc
x ACPR₆₀₀ = −72 dBc
x EVM_rms = 1.5 %
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use