BLC6G20-110 Datasheet, PDF (1/9 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation f
V_DS P_L
G_p
η_D ACPR₄₀₀ ACPR₆₀₀
(MHz)
(V) (W)
(dB) (%) (dBc)
(dBc)
CW
1930 to 1990 28 100
17 51 -
-
GSM EDGE
1930 to 1990 28 48 (AV) 17.5 40 −60
−70
2-carrier W-CDMA 1930 to 1990 28 25 (AV) 18 32 -
-
EVM
(%)
-
2.1
-
IMD3
(dBc)
-
-
−37 ^[1]
ACPR
(dBc)
-
-
−40 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I_Dq of 950 mA:
x Output power = 25 W (AV)
x Gain = 18 dB
x Efficiency = 32 %
x IMD3 = −37 dBc
x ACPR = −40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use