BLC2425M8LS300P_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLC2425M8LS300P
Power LDMOS transistor
Rev. 1 — 3 July 2015
Objective data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLC2425M8LS300P is designed for high-power CW applications and is assembled in
a high performance plastic package.
Table 1. Typical performance
RF performance at V_DS = 32 V; I_Dq = 20 mA; T_case = 25 C in a class-AB application circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
CW
2450
32
300
17.0
58.0
CW pulsed ^[1]
2450
32
300
17.5
61.0
[1] t_p = 100 s;  = 10 %
1.2 Features and benefits
 High efficiency
 Easy power control
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Internally matched
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM applications and heating.