BLA6H0912L-1000_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS avionics power transistor

BLA6H0912L-1000;
BLA6H0912LS-1000
LDMOS avionics power transistor
Rev. 4 — 2 July 2015
Product data sheet
1. Product profile
1.1 General description
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in
the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and
TACAN.
Table 1. Application information
Typical RF performance at T_case = 25 C; t_p = 50 s;  = 2 %; I_Dq = 200 mA; in a class-AB application
circuit.
Test signal
f
V_DS
P_L
G_p
_D
t_r
t_f
(MHz)
(V)
(W)
(dB) (%) (ns) (ns)
pulsed RF
1030
50
1000 16
52 11
5
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (960 MHz to 1215 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME
and TACAN applications in the 960 MHz to 1215 MHz frequency range