BLA6G1011-200R_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLA6G1011-200R;
BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev. 5 — 17 March 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1. Test information
Typical RF performance at T_case = 25 C.
Test signal
f
(MHz)
V_DS P_L
G_p
_D
t_r
t_f
(V) (W) (dB) (%) (ns) (ns)
Typical RF performance in a class-AB production test circuit for SOT502A
pulsed RF
1030 to 1090
28 200 20
65 10
6
Typical RF performance in a Gullwing application for SOT502C and SOT502D
pulsed RF
1030 to 1090
28 200 20
65 15
6
1.2 Features and benefits
 Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply
voltage of 28 V and an I_Dq of 100 mA:
 Output power = 200 W
 Power gain = 20 dB
 Efficiency = 65 %
 Easy power control
 Integrated ESD protection
 Enhanced ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (1030 MHz to 1090 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.