BLA1011-200.112 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1: Typical performance
RF performance at T_h = 25 °C in a common source class-AB test circuit; I_Dq = 150 mA; typical
values.
Mode of operation
Conditions
V_DS P_L
G_p
η_D
t_r
t_f
(V) (W) (dB) (%) (ns) (ns)
Pulsed class-AB:
t_p = 50 µs; δ = 2 %
36 200 15 50 35 6
1030 MHz to 1090 MHz _{tp = 128 µs; δ = 2 %}
36
250 14
50
35
6
t_p = 340 µs; δ = 1 % 36 250 14 50 35 6
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an I_Dq of 150 mA:
x Load power ≥ 200 W
x Gain ≥ 13 dB
x Efficiency ≥ 45 %
x Rise time ≤ 50 ns
x Fall time ≤ 50 ns
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.