BFU710F_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU710F
NPN wideband silicon germanium RF transistor
Rev. 1 — 20 April 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
„ Low noise high gain microwave transistor
„ Noise figure (NF) = 1.45 dB at 12 GHz
„ High maximum power gain 14 dB at 12 GHz
„ 110 GHz f_T silicon germanium technology
1.3 Applications
„ 2nd LNA stage and mixer stage in DBS LNB’s
„ Low noise amplifiers for microwave communications systems
„ Ka band oscillators DRO’s
„ Low current battery equipped applications
„ Microwave driver / buffer applications
„ GPS
„ RKE
„ AMR
„ ZigBee
„ FM radio
„ Mobile TV
„ Bluetooth