BFU580G_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
 Low noise, high linearity, high breakdown RF transistor
 AEC-Q101 qualified
 Minimum noise figure (NF_min) = 0.75 dB at 900 MHz
 Maximum stable gain 15.5 dB at 900 MHz
 11 GHz f_T silicon technology
1.3 Applications
 Applications requiring high supply voltages and high breakdown voltages
 Broadband amplifiers up to 2 GHz
 Low noise, high linearity amplifiers for ISM applications
 Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified
Symbol Parameter
Conditions
V_CB
collector-base voltage
open emitter
V_CE
collector-emitter voltage open base
shorted base
V_EB
emitter-base voltage
open collector
I_C
collector current
P_tot
total power dissipation
T_sp  120 C
h_FE
DC current gain
I_C = 30 mA; V_CE = 8 V
C_c
collector capacitance
V_CB = 8 V; f = 1 MHz
f_T
transition frequency
I_C = 30 mA; V_CE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 30
[1] _-
-
60 95
- 1.1
- 11
Max Unit
24 V
12 V
24 V
2V
60 mA
1000 mW
130
-
pF
-
GHz