BF1206F Datasheet, PDF (1/20 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET

BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Two low noise gain controlled amplifiers in a single package
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
s Suited for 3 volt applications
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners