BF1205C Datasheet, PDF (1/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FET

BF1205C
Dual N-channel dual gate MOS-FET
Rev. 01 — 18 May 2004
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio.
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment.