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BAS28_15 Datasheet, PDF (1/12 Pages) Central Semiconductor Corp – ISOLATED HIGH SPEED SILICON SWITCHING DIODES | |||
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BAS28
High-speed double diode
Rev. 3 â 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
 High switching speed: trr ⤠4 ns
 Reverse voltage: VR ⤠75 V
 Repetitive peak reverse voltage: VRRM ⤠85 V
 Repetitive peak forward current: IFRM ⤠500 mA
 AEC-Q101 qualified
 Small SMD package
1.3 Applications
 High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
IF
forward current
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
Conditions
VR = 75 V
Min Typ
[1] -
-
-
-
-
-
[2] -
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
215
1
75
4
Unit
mA
μA
V
ns
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