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| BAS21PG_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual isolated high-voltage switching diode | |||
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BAS21PG
Dual isolated high-voltage switching diode
9 June 2015
Product data sheet
1. General description
Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠High switching speed: trr ⤠50 ns
⢠Low leakage current
⢠Reverse voltage VR ⤠250 V
⢠Low capacitance: Cd ⤠2 pF
⢠Very small SMD plastic package
⢠AEC-Q101 qualified
3. Applications
⢠High-speed switching at high voltage
⢠High-voltage general-purpose switching
⢠Voltage clamping
⢠Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
Tj = 25 °C; single diode loaded
VR
reverse voltage
Tj = 25 °C
Per diode
IR
reverse current
VR = 200 V; Tj = 25 °C
trr
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tj = 25 °C
Min Typ Max Unit
-
-
225 mA
-
-
250 V
-
25
100 nA
-
-
50
ns
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