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BAS21J_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – BAS21J_15 | |||
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BAS21J
Single high-speed switching diode
Rev. 01 â 8 March 2007
Product data sheet
1. Product proï¬le
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
ï¬at lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I High switching speed: trr ⤠50 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM ⤠300 V
I Excellent coplanarity and improved
thermal behavior
I Low capacitance: Cd ⤠2 pF
I Reverse voltage: VR ⤠300 V
I Very small and ï¬at lead SMD plastic
package
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IR
VR
trr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
VR = 250 V
Min Typ
[1] -
-
-
-
-
-
[2] -
-
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 â¦; measured at IR = 3 mA.
Max
250
150
300
50
Unit
mA
nA
V
ns
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