BAS21AVD_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – High-voltage switching diodes

BAS21AVD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: t_rr ≤ 50 ns
• Reverse voltage: V_R ≤ 200 V
• Repetitive peak reverse voltage: V_RRM ≤ 250 V
• Small SMD plastic package
• Low capacitance: C_d ≤ 5 pF
• AEC-Q101 qualified
• Repetitive peak forward current: I_FRM ≤ 1 A
3. Applications
• High-voltage switching in surface-mounted circuits
• Automotive
• Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
I_F
forward current
pulsed; t_p ≤ 300 µs; δ ≤ 0.02
[1]
V_R
reverse voltage
Per diode
I_R
reverse current
V_R = 200 V; T_amb = 25 °C; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02
t_rr
reverse recovery time I_F = 30 mA; I_R = 30 mA; I_R(meas) = 3 mA;
R_L = 100 Ω; T_amb = 25 °C
Min Typ Max Unit
-
-
200 mA
-
-
200 V
-
25
100 nA
-
16
50
ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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