BAS101_BAS101S_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – High-voltage switching diodes

BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
BAS101
SOT23
BAS101S
SOT23
JEITA
-
-
Configuration
single
dual series
1.2 Features
„ High switching speed: t_rr ≤ 50 ns
„ Low leakage current
„ Repetitive peak reverse voltage:
V_RRM ≤ 300 V
1.3 Applications
„ High-speed switching
„ High-voltage switching
„ Low capacitance: C_d ≤ 2 pF
„ Reverse voltage: V_R ≤ 300 V
„ Small SMD plastic package
„ Voltage clamping
„ Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
I_F
forward current
I_R
reverse current
V_R
reverse voltage
t_rr
reverse recovery time
Conditions
Min Typ
-
-
V_R = 250 V
-
-
-
-
[1] _-
-
[1] When switched from I_F = 30 mA to I_R = 30 mA; R_L = 100 Ω; measured at I_R = 3 mA.
Max
200
150
300
50
Unit
mA
nA
V
ns