74AUP2G04 Datasheet, PDF (1/18 Pages) NXP Semiconductors – Low-power dual inverter

74AUP2G04
Low-power dual inverter
Rev. 01. — 16 January 2006
Preliminary data sheet
1. General description
The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V_CC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V_CC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I_OFF.
The I_OFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP2G04 provides two inverting buffers.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-C Class 3A. Exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; I_CC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of V_CC
s I_OFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C