2PD2150 Datasheet, PDF (1/11 Pages) NXP Semiconductors – 20 V, 3 A NPN low VCEsat transistor

2PD2150
20 V, 3 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability: I_C and I_CM
s High collector current gain (h_FE) at high I_C
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V_CEO
I_CM
h_FE
Quick reference data
Parameter
collector-emitter voltage
peak collector current
DC current gain
Conditions
open base
single pulse;
t_p ≤ 1 ms
V_CE = 2 V;
I_C = 0.1 A
Min Typ Max Unit
-
-
20
V
-
-
3
A
180 -
390