2PB1424 Datasheet, PDF (1/11 Pages) NXP Semiconductors – 20 V, 3 A PNP low VCEsat transistor

2PB1424
20 V, 3 A PNP low V_CEsat (BISS) transistor
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: 2PD2150.
1.2 Features
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability: I_C and I_CM
s High collector current gain (h_FE) at high I_C
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
V_CEO
I_CM
collector-emitter voltage
peak collector current
h_FE
DC current gain
Conditions
open base
single pulse;
t_p ≤ 1 ms
V_CE = −2 V;
I_C = −0.1 A
Min Typ Max
Unit
-
-
−20
V
-
-
−3
A
180 -
390