2N7002_15 Datasheet, PDF (1/13 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Suitable for logic level gate drive
sources
 Very fast switching
 Surface-mounted package
 Trench MOSFET technology
1.3 Applications
 Logic level translators
 High-speed line drivers
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
25 °C ≤ T_j ≤ 150 °C
V_GS = 10 V; T_sp = 25 °C; see Figure 1;
see Figure 3
T_sp = 25 °C; see Figure 2
V_GS = 10 V; I_D = 500 mA; T_j = 25 °C;
see Figure 6; see Figure 8
2. Pinning information
Min Typ Max Unit
-
-
60 V
-
-
300 mA
-
-
0.83 W
-
2.8 5
Ω
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
gate
S
source
D
drain
Simplified outline
3
1
2
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S