1PS76SB10_15_15 Datasheet, PDF (1/8 Pages) NXP Semiconductors – Schottky barrier single diode

1PS76SB10
Schottky barrier single diode
17 December 2012
Product data sheet
1. General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a very small SOD323 Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Low forward voltage
• Low capacitance
• AEC-Q101 qualified
3. Applications
• Ultra high-speed switching
• Line termination
• Voltage clamping
• Reverse polarity protection
4. Quick reference data
Table 1.
Symbol
I_F
V_R
V_F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
I_F = 10 mA; pulsed; t_p = 300 µs;
δ = 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
200 mA
-
-
30
V
-
-
400 mV
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
2
SOD323
[1] The marking bar indicates the cathode.
Graphic symbol
K
A
aaa-003679
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