1PS66SB82_1PS88SB82_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – 15 V, 30 mA low Cd Schottky barrier diodes

1PS66SB82; 1PS88SB82
15 V, 30 mA low C_d Schottky barrier diodes
Rev. 04 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic
packages.
Table 1. Product overview
Type number
Package
NXP
1PS66SB82
SOT666
1PS88SB82
SOT363
JEITA
-
SC-88
Configuration
triple isolated diode
triple isolated diode
1.2 Features
„ Low diode capacitance
„ Low forward voltage
„ Very small SMD plastic packages
1.3 Applications
„ Digital applications:
‹ Ultra high-speed switching
‹ Clamping circuits
„ RF applications:
‹ Diode ring mixer
‹ RF detector
‹ RF voltage doubler
1.4 Quick reference data
Table 2.
Symbol
I_F
V_R
C_d
Quick reference data
Parameter
Conditions
continuous forward current
continuous reverse voltage
diode capacitance
V_R = 0 V;
f = 1 MHz;
see Figure 4
Min Typ Max Unit
-
-
30
mA
-
-
15
V
-
1
-
pF