1PS66SB17 Datasheet, PDF (1/8 Pages) NXP Semiconductors – 4 V, 30 mA low Cd Schottky barrier diode

1PSxSB17
4 V, 30 mA low C_d Schottky barrier diode
Rev. 06 — 4 April 2005
Product data sheet
1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
Table 1: Product overview
Type number
Package
Philips
1PS66SB17
SOT666
1PS76SB17
SOD323
1PS79SB17
SOD523
JEITA
-
SC-76
SC-79
Configuration
triple isolated diode
single diode
single diode
1.2 Features
s Very low diode capacitance
s Very low forward voltage
s Very small SMD plastic packages
1.3 Applications
s Digital applications:
x Ultra high-speed switching
x Clamping circuits.
s RF applications:
x Diode ring mixer
x RF detector
x RF voltage doubler
1.4 Quick reference data
Table 2:
Symbol
I_F
V_R
C_d
Quick reference data
Parameter
Conditions
continuous forward current
continuous reverse voltage
diode capacitance
Min Typ Max Unit
-
-
30
mA
-
-
4
V
-
0.8 1
pF