1PS302_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual high-speed switching diode

1PS302
Dual high-speed switching diode
Rev. 6 — 23 July 2012
Product data sheet
1. Product profile
1.1 General description
Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 High switching speed: t_rr  4 ns
 Repetitive peak reverse voltage:
V_RRM  85 V
 Reverse voltage: V_R  80 V
 AEC-Q101 qualified
 Low capacitance: C_d  1.5 pF
 Repetitive peak forward current:
I_FRM  500 mA
 Very small SMD plastic package
1.3 Applications
 High-speed switching
 General-purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
I_F
forward current
Conditions
I_R
reverse current
V_R = 80 V
V_R
reverse voltage
t_rr
reverse recovery time
Min Typ Max Unit
[1]
[2] _-
-
200 mA
[3] _-
-
170 mA
-
-
0.5 A
-
-
80
V
[4] _-
-
4
ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Single diode loaded.
[3] Double diode loaded.
[4] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 ; measured at I_R = 1 mA.