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1PS301_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual high-speed switching diode | |||
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1PS301
Dual high-speed switching diode
Rev. 5 â 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
ï® High switching speed: trr ï£ 4 ns
ï® Repetitive peak reverse voltage:
VRRM ï£ 85 V
ï® Reverse voltage: VR ï£ 80 V
ï® AEC-Q101 qualified
ï® Low capacitance: Cd ï£ 1.5 pF
ï® Repetitive peak forward current:
IFRM ï£ 500 mA
ï® Very small SMD plastic package
1.3 Applications
ï® High-speed switching
ï® General-purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
IF
forward current
Conditions
IR
reverse current
VR = 80 V
VR
reverse voltage
trr
reverse recovery time
Min Typ Max Unit
[1]
[2] -
-
250 mA
[3] -
-
160 mA
-
-
0.5 ïA
-
-
80
V
[4] -
-
4
ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Single diode loaded.
[3] Double diode loaded.
[4] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ï; measured at IR = 1 mA.
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