CRD13003BC Datasheet, PDF (2/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

CRD13003BC ^{(9AC) (Tin Finish Part)} LEAD FREE
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
Emitter Cut Off Current
V_CBO
I_C=1mA, I_E=0
700 -
-
**V_{CEO (sus)}
I_C=10mA, I_B=0
400 -
-
I_CBO
V_CB=700V_, I_E=0
-
- 1.0
V_CB=700V_, I_E=0, T_c=100ºC
5.0
I_EBO
V_EB=9V, I_C=0
-
- 1.0
DC Current Gain
**h_FE
I_C=0.5A, V_CE=5V
15
-
22
I_C=2A, V_CE=5V
4.0 - 25
Collector Emitter Saturation Voltage
**V_{CE (sat)}
I_C=0.5A, I_B=0.1A
-
- 0.5
I_C=1A, I_B=0.25A
-
- 1.0
I_C=1.5A, I_B=0.5A
-
- 2.5
I_C=1A, I_B=0.25A,T_c=100ºC -
- 1.0
Base Emitter Saturation Voltage
**V_{BE (sat)}
I_C=0.5A, I_B=0.1A
-
- 1.0
I_C=1A, I_B=0.25A
-
- 1.2
I_C=1A, I_B=0.25A, T_c=100ºC -
- 1.1
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
f_T
C_ob
TEST CONDITION
I_C=100mA, V_CE=10V,
f=1MHz
V_CB=10V, f=0.1MHz
MIN TYP MAX
4.0 -
-
-
21
-
SWITCHING TIME
DESCRIPTION
Turn on Time
Fall Time
Storage Time
MARKING
SYMBOL
t_on
t_f
t_stg
C = CDIL Logo
P = Plant Code, N for Delhi
X = Year of Manufacturer
YY = Week Code
**Pulse Test:- PW=300µs, Duty Cycle=2%
TEST CONDITION
V_CC=125V
I_B1=0.2A, I_B2=0.2A
I_C=1A
MIN TYP MAX
-
- 1.1
-
- 0.7
-
- 4.0
For Lead Free Lead Finish
CRD1
3003
BC
PXYY
'T' stands for Tin finish leads
UNIT
V
V
mA
mA
mA
V
V
V
V
V
V
V
UNIT
MHz
pF
UNIT
µs
µs
µs
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