S9015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors

S9015 TRANSISTOR (PNP)
TO-92
FEATURES
z High total power dissipation.(P_C=0.45W)
z High h_FE and good linearity
z Complementary to S9014
1.EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-50
V
V_CEO
Collector-Emitter Voltage
-45
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-0.1
A
P_C
Collector Power Dissipation
0.45
W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE(1)
Rank
A
Range
60-150
Symbol
Test conditions
V_(BR)CBO
I_C= -100μA, I_E=0
V_(BR)CEO
I_C= -1mA, I_B=0
V_(BR)EBO
I_E=-100μA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB= -5V, I_C=0
h_FE
V_CE=-5V, I_C= -1mA
V_CE(sat)
I_C=-100mA, I_B= -10mA
V_BE(sat)
f_T
I_C=-100mA, I_B=-10mA
V_CE=-5V, I_C= -10mA
f=30MHz
MIN
-50
-45
-5
60
100
B
250-300
C
300-400
123
TYP MAX UNIT
V
V
V
-0.05 μA
-0.05 μA
1000
-0.3 V
-1
V
MHz
D
400-1000
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