D882 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

D882 TRANSISTOR ( NPN )
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Junction and Storage Temperature
Value
40
30
6
3
1.25
150
-55-150
Units
V
V
V
A
W
℃
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic=100uA ,I_E=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= 100 mA ,I_C=0
6
V
Collector cut-off current
I_CBO
V_CB=40 V , I_E=0
1
uA
Collector cut-off current
I_CEO
V_CE=30 V , I_B=0
10 uA
Emitter cut-off current
I_EBO
V_EB=6V , I_C=0
1
uA
DC current gain
h_FE(1)
V_CE= 2V, I_C= 1A
60
400
h_FE(2)
V_CE=2V, I_C= 100mA
32
Collector-emitter saturation voltage
V_CE(sat)
I_C=2A, I_B= 0.2A
0.5
V
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
I_C=2A, I_B= 0.2A
V_CE=5 V, I_C=0.1mA
f_T
50
f = 10MHz
1.5
V
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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