VTT9102 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .040 NPN Phototransistors

.040" NPN Phototransistors
Epoxy Lensed TO-106 Ceramic Package
VTT9102, 9103
PACKAGE DIMENSIONS inch (mm)
CASE 9 TO-106 (LENSED)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon
phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a lens of clear epoxy. The base
connection is brought out allowing conventional transistor
biasing. These devices are spectrally matched to any of
PerkinElmer IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-20°C to 70°C
-20°C to 70°C
100 mW
2.5 mW/°C
50 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current
Part Number
l_C
mA
Min. Max.
H
fc (mW/cm²)
V_CE = 5.0 V
VTT9102
VTT9103
6.0 —
13.0 —
100 (5)
100 (5)
Dark Current
l_CEO
H=0
(nA) V_CE
Max. (Volts)
100 5
100 5
Collector
Breakdown
V_BR(CEO)
l_C = 100 µA
H=0
Volts, Min.
30
30
Emitter
Breakdown
V_BR(ECO)
l_E = 100 µA
H=0
Volts, Min.
4.0
4.0
Saturation
Voltage
V_CE(SAT)
l_C = 1.0 mA
H = 400 fc
Rise/Fall Time
t_R/t_F
l_C = 1.0 mA
R_L = 100 Ω
Angular
Response θ_1/2
Volts, Max. µsec, Typ.
Typ.
0.55
6.0
±42°
0.55
10.0
±42°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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