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VTT9002 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .040 NPN Phototransistors
.040" NPN Phototransistors
Clear Epoxy TO-106 Ceramic Package
VTT9002, 9003
PACKAGE DIMENSIONS inch (mm)
CASE 8 TO-106 (FLAT)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon
phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a layer of clear epoxy. The base
connection is brought out allowing conventional transistor
biasing. These devices are spectrally matched to any of
PerkinElmer IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-20°C to 70°C
-20°C to 70°C
100 mW
2.5 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current
Part Number
lC
mA
Min. Max.
H
fc (mW/cm2)
VCE = 5.0 V
VTT9002 2.0 —
VTT9003 5.0 —
100 (5)
100 (5)
Dark Current
lCEO
H=0
(nA) VCE
Max. (Volts)
100 10
100 10
Collector
Breakdown
VBR(CEO)
lC = 100 µA
H=0
Volts, Min.
30
30
Emitter
Breakdown
VBR(ECO)
lE = 100 µA
H=0
Volts, Min.
6.0
6.0
Saturation
Voltage
VCE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/tF
lC = 1.0 mA
RL = 100 Ω
Angular
Response θ1/2
Volts, Max.
µsec, Typ.
Typ.
0.55
4.0
±50°
0.55
6.0
±50°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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