VTT3423LA Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .025 NPN Phototransistors

.025" NPN Phototransistors
IRT Long T-1 (3 mm) Plastic Package
VTT3423LA, 4LA, 5LA
PACKAGE DIMENSIONS inch (mm)
CASE 50A LONG T-1 (3 mm)
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor in a
3 mm diameter, lensed plastic package. The package
material transmits infrared and blocks visible light. These
devices are spectrally and mechanically matched to the
VTE33xxLA series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT3423LA
VTT3424LA
VTT3425LA
Light Current
l_C
mA
Min. Max.
H
fc (mW/cm²)
V_CE = 5.0 V
1.0 —
2.0 —
3.0 —
20 (1)
20 (1)
20 (1)
Dark Current
l_CEO
H=0
(nA) V_CE
Max. (Volts)
100 10
100 10
100 10
Collector
Breakdown
V_BR(CEO)
l_C = 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V_BR(ECO)
l_E = 100 µA
H=0
Volts, Min.
5.0
5.0
5.0
Saturation
Voltage
V_CE(SAT)
l_C = 1.0 mA
H = 400 fc
Rise/Fall Time
t_R/t_F
l_C = 1.0 mA
R_L = 100 Ω
Angular
Response
θ_1/2
Volts, Max. µsec, Typ.
Typ.
0.25
3.0
±10°
0.25
4.0
±10°
0.25
5.0
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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