VTT1225 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .025 NPN Phototransistors

.025" NPN Phototransistors
Clear T-1¾ (5 mm) Plastic Package
VTT1225, 26, 27
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾ (5 mm)
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
a half power acceptance angle (θ_1/2) of 5°. These devices
are spectrally and mechanically matched to the VTE12xx
series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT1225
VTT1226
VTT1227
Light Current
l_C
mA
Min. Max.
H
fc (mW/cm²)
V_CE = 5.0 V
4.0 —
7.5 —
12.0 —
100 (5)
100 (5)
100 (5)
Dark Current
l_CEO
H=0
(nA) V_CE
Max. (Volts)
100 10
100 10
100 10
Collector
Breakdown
V_BR(CEO)
l_C = 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V_BR(ECO)
l_E = 100 µA
H=0
Volts, Min.
5.0
5.0
5.0
Saturation
Voltage
V_CE(SAT)
l_C = 1.0 mA
H = 400 fc
Rise/Fall Time
t_R/t_F
l_C = 1.0 mA
R_L = 100 Ω
Volts, Max.
µsec, Typ.
0.25
1.5
0.25
3.0
0.25
4.0
Angular
Response
θ_1/2
Typ.
±5°
±5°
±5°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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