VTT1212 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .040 NPN Phototransistors

.040" NPN Phototransistors
Clear T-1¾ (5 mm) Plastic Package
VTT1212, 1214
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1 ¾ (5 mm)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high speed NPN silicon phototransistor
possessing excellent sensitivity and good speed mounted
in a lensed, end looking, transparent plastic package.
These devices are spectrally and mechanically matched
to the VTE12xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages (91-92)
Part Number
VTT1212
VTT1214
Light Current
l_C
mA
Min. Max.
H
fc (mW/cm²)
V_CE = 5.0 V
2.0 —
4.0 —
20 (1)
20 (1)
Dark Current
l_CEO
H=0
(nA) V_CE
Max. (Volts)
100 10
100 10
Collector
Breakdown
V_BR(CEO)
l_C = 100 µA
H=0
Volts, Min.
30
30
Emitter
Breakdown
V_BR(ECO)
l_E = 100 µA
H=0
Volts, Min.
5.0
5.0
Saturation
Voltage
V_CE(SAT)
l_C = 1.0 mA
H = 400 fc
Rise/Fall Time
t_R/t_F
l_C = 1.0 mA
R_L = 100 Ω
Volts, Max. µsec, Typ.
0.25
4.0
0.25
6.0
Refer to General Product Notes, page 2.
Angular
Response
θ_1/2
Typ.
±10°
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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