VTT1115 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – .050 NPN Phototransistors

.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS inch (mm)
CASE 3 TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT1115
VTT1116
VTT1117
Light Current
l_C
mA
Min. Max.
H
fc (mW/cm²)
V_CE = 5.0 V
1.0 —
2.0 —
4.0 —
20 (1)
20 (1)
20 (1)
Dark Current
l_CEO
H=0
(nA) V_CE
Max. (Volts)
100 10
100 10
100 10
Collector
Breakdown
V_BR(CEO)
l_C = 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V_BR(ECO)
l_E = 100 µA
H=0
Volts, Min.
6.0
4.0
4.0
Saturation
Voltage
V_CE(SAT)
l_C = 1.0 mA
H = 400 fc
Rise/Fall Time
t_R/t_F
l_C = 1.0 mA
R_L = 100 Ω
Angular
Response θ_1/2
Volts, Max. µsec, Typ.
Typ.
0.40
5.0
±15°
0.40
8.0
±15°
0.40
8.0
±15°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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