VTP8651 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP8651
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI-DIP
CHIP ACTIVE AREA: .012 in² (7.45 mm²)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic,
infrared transmitting package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning devices side by side. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
C_J
Re
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
VTP8651
Min.
Typ.
Max.
35
55
.24
300
-2.0
30
.15
50
.045
.50
725
1150
925
33
140
±50
2.0 x 10^-13 (Typ.)
1.4 x 10 ¹² (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm²)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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