VTP8350 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP8350
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC
CHIP ACTIVE AREA: .012 in² (7.45 mm²)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
C_J
Re
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
VTP8350
Min.
Typ.
Max.
65
80
.20
350
-2.0
30
100
50
.06
.55
400
1150
925
33
140
±60
1.8 x 10^-13 (Typ.)
1.5 x 10 ¹² (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm²)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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