VTP7840 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP7840
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 51 LENSED SIDELOOKER
CHIP ACTIVE AREA: .0082 in² (5.27 mm²)
Planar silicon photodiode in a transfer molded,
large lensed sidelooker package. The dark
package material filters out visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
C_J
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Forward Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
@ Peak
@ 10 mA
VTP7840
Min.
Typ.
Max.
50
70
.20
325
-2.0
20
0.25
40
.55
725
1150
925
1.0
±48
5.3 x 10^-14 (Typ.)
5.1 x 10 ¹² (Typ.)
UNITS
µA
%/°C
mV
nA
GΩ
pF
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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