VTP7210 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP7210
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 7 LATERAL
CHIP ACTIVE AREA: .0011 in² (0.684 mm²)
Small area planar silicon photodiode in a lensed
sidelooking package. The package material
filters out visible light but passes infrared. These
diodes exhibit low dark current under reverse
bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
C_J
Re
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
VTP7210
Min.
Typ.
Max.
5
7
.26
350
-2.0
35
7
25
.015
.55
700
1150
925
30
140
±58
1.9 x 10^-13 (Typ.)
5.3 x 10 ¹¹ (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm²)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
59