VTP6060 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP6060
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. Cathode is
common to the case. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .032 in² (20.6 mm²)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
C_J
Re
S_R
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
@ Peak
VTP6060
Min.
Typ.
Max.
120
200
.20
350
-2.0
35
100
60
.14
.55
400
1150
925
50
140
±45
1.9 x 10^-13 (Typ.)
2.3 x 10 ¹² (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm²)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
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