VTP1332 Datasheet, PDF (1/2 Pages) PerkinElmer Optoelectronics – SILICON PHOTODIODE

SILICON PHOTODIODE
VTP1332
FEATURES
• _{Low dark current}
• _{Fast response}
• _{Infrared transmitting/visible blocking}
spectral range
• _{Low junction capacitance}
PRODUCT DESCRIPTION
This VTP processed P on N planar silicon
photodiode is housed in an IR transmitting,
T-1 3/4 endlooking package.
These diodes exhibit low dark current under
reverse bias. The VTP process offers low
capacitance, resulting in fast response times.
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL MIN.
SHORT CIRCUIT CURRENT @ 100 fc, 2850 K
ISC
75
RESPONSIVITY @ 880 nm
Re
0.050
DARK CURRENT @ V_R = 10 V
I_D
REVERSE BREAKDOWN VOLTAGE @ 100 µA
VBR
30
JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz
CJ
ANGULAR RESPONSE (50% RESPONSE POINT)
θ1/2
TYP.
0.065
±20
MAX.
25
100
UNITS
µA
A/(W/cm²)
nA
V
pF
Degrees
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1 3/4
CHIP SIZE: .075 x .075 (1.90 x 1.90)
TOTAL EXPOSED AREA: .0036 in² (2.326 mm²)
10900 PAGE AVE.
ST. LOUIS, MO. 63132 USA
FAX [phone]
PHONE [phone]