VTP1232 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP1232
PACKAGE DIMENSIONS inch (mm)
(Also available in infrared transmitting visible
blocking version)
PRODUCT DESCRIPTION
This photodiode features the largest detection
area available in a clear, endlooking T-1¾
package. Combined with excellent dark current,
it can fulfill the demands of many difficult
applications.
CASE 26 T-1¾
CHIP ACTIVE AREA: .0036 in² (2.326 mm²)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP1232
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Typ.
Max.
I_SC
TC I_SC
Re
V_OC
TC V_OC
I_D
C_J
λ_range
λ_p
S_R
Short Circuit Current
I_SC Temperature Coefficient
Responsivity
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
H = 100 fc, 2850 K
2850 K
880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 0 V
@ Peak
100
0.20
0.06
0.076
.42
-2.0
25
.18
.30
400
1100
920
0.60
UNITS
µA
%/°C
A/(W/cm²)
mV
mV/°C
nA
nF
nm
nm
A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
52