VTP1188S Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTP Process Photodiodes

VTP Process Photodiodes
VTP1188S
PACKAGE DIMENSIONS inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in² (1.1 mm²)
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase sensitivity. Low junction
capacitance permits fast response time.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
I_SC
TC I_SC
I_SC
V_OC
TC V_OC
I_D
R_SH
TC R_SH
C_J
λ_range
λ_p
S_R
Short Circuit Current
I_SC Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
R_SH Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
TEST CONDITIONS
H = 100 fc, 2850 K
2850 K
100 µW/cm², 880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 mV
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V =0 V
@ Peak
VTP11188S
Min.
Typ.
Max.
200
.20
13
25
.33
-2.0
3
30
67
-11
.18
.30
400
1100
925
.55
UNITS
µA
%/°C
µA
mV
mV/°C
nA
GΩ
%/°C
nF
nm
nm
A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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