VTE3372LA Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – GaAlAs Infrared Emitting Diodes

GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm
VTE3372LA, 74LA
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A Long T-1 (3 mm)
CHIP SIZE: .011" x .011"
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small
area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
100 mW
1.43 mW/°C
50 mA
0.71 mA/°C
2.5 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ V_R = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I_F = 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Part Number
VTE3372LA
VTE3374LA
Output
Irradiance
E_e
mW/cm²
Min.
Typ.
2.0
2.6
4.0
5.2
Condition
distance Diameter
mm
mm
10.16
2.1
10.16
2.1
Radiant
Intensity
Total Power
Test
Current
I_e
mW/sr
Min.
2.0
4.1
P_O
I_FT
mW
mA
Typ.
(Pulsed)
3.0
20
5.0
20
Forward Drop
V_F
@ I_FT
Volts
Typ.
Max.
1.3
1.8
1.3
1.8
Refer to General Product Notes, page 2.
Half Power Beam
Angle
θ_1/2
Typ.
±10°
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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