VTE3322LA Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – GaAs Infrared Emitting Diodes

GaAs Infrared Emitting Diodes _{VTE3322LA, 24LA}
Long T-1 Plastic Package — 940 nm
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A LONG T-1
CHIP SIZE: .011" X .011"
This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
-40°C to 100°C
100 mW
1.43 mW/°C
50 mA
0.71 mA/°C
3A
-.8%/°C
5.0V
Maximum Reverse Current @ V_R = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I_F = 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.
10 µA
940 nm
14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Part Number
VTE3322LA
VTE3324LA
Output
Irradiance
E_e
mW/cm²
Min.
Typ.
1.0
1.3
2.0
2.6
Condition
distance Diameter
mm
mm
10.16
2.1
10.16
2.1
Radiant
Intensity
Total Power
Test
Current
I_e
mW/sr
Min.
1.0
2.0
P_O
I_FT
mW
mA
Typ.
(Pulsed)
1.5
20
2.5
20
Forward Drop
V_F
@ I_FT
Volts
Typ.
Max.
1.25
1.6
1.25
1.6
Half Power Beam
Angle
θ_1/2
Typ.
±10°
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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