VTE1261 Datasheet, PDF (1/2 Pages) PerkinElmer Optoelectronics – GaAlAs Infrared Emitting Diodes

GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1261, 1262
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26 T-1¾ (5 mm)
CHIP SIZE: .018" x .018"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high
efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
3.0 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ V_R = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I_F = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Part Number
VTE1261
VTE1262
Output
Irradiance
E_e
mW/cm²
Min.
Typ.
3.0
3.9
4.0
5.2
Condition
distance Diameter
mm
mm
36
6.4
36
6.4
Radiant
Intensity
Total Power
Test
Current
I_e
mW/sr
Min.
39
52
P_O
I_FT
mW
mA
Typ.
(Pulsed)
20
100
25
100
Forward Drop
V_F
@ I_FT
Volts
Typ.
Max.
1.5
2.0
1.5
2.0
Half Power Beam
Angle
θ_1/2
Typ.
±10°
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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