VTE1113 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – GaAs Infrared Emitting Diodes

GaAs Infrared Emitting Diodes
TO-46 Lensed Package — 940 nm
VTE1113
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" X .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for
higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-55°C to 125°C
200 mW
2.11 mW/°C
100 mA
1.05 mA/°C
3.0 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ V_R = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I_F = 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.
5.0V
10 µA
940 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Part Number
VTE1113
Output
Irradiance
E_e
mW/cm²
Min.
Typ.
12
15
Condition
distance Diameter
mm
mm
36
6.4
Radiant
Intensity
Total Power
Test
Current
I_e
mW/sr
Min.
156
P_O
I_FT
mW
mA
Typ.
(Pulsed)
30
1.0
Forward Drop
V_F
@ I_FT
Volts
Typ.
Max.
1.9
2.5
Half Power Beam
Angle
θ_1/2
Typ.
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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