VTD34F Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – Alternate Source/ Second Source Photodiodes

Alternate Source/
Second Source Photodiodes
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package material filters out visible light
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in² (7.45 mm²)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Re Responsivity
0.5 mW/cm², 940 nm
15
V_OC Open Circuit Voltage
0.5 mW/cm², 940 nm
275
TC V_OC V_OC Temperature Coefficient
2850 K
I_D
Dark Current
H = 0, V_R = 10 V
C_J Junction Capacitance
@ 1 MHz, V_R = 0 V
t_R/t_F Rise/Fall Time @ 1 kΩ Lead
V_R = 10 V, 833 nm
S_R Sensitivity
@ Peak
λ_range Spectral Application Range
725
λ_p
Spectral Response - Peak
V_BR Breakdown Voltage
40
θ_1/2 Angular Resp.-50% Resp. Pt.
NEP Noise Equivalent Power
D* Specific Detectivity
VTD34F
Typ.
350
-2.0
2
60
50
0.60
940
±50
4.8 x 10^-14
5.7 x 10¹²
UNITS
Max.
µA
mV
mV/°C
30
nA
pF
nsec
A/W
1150
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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