VTD34 Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – Alternate Source/ Second Source Photodiodes

Alternate Source/
Second Source Photodiodes
VTD34
(BPW34 INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in² (7.45 mm²)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded
plastic package. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are
designed to provide excellent sensitivity at low levels
of irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
I_SC Short Circuit Current
1000 Lux, 2850 K
50
TC I_SC I_SC Temperature Coefficient
2850 K
V_OC Open Circuit Voltage
H = 1000 Lux, 2850 K
300
TC V_OC V_OC Temperature Coefficient
2850 K
I_D
Dark Current
H = 0, V_R = 10 V
C_J Junction Capacitance
@ 1 MHz, V_R = 0 V
t_R/t_F Rise/Fall Time @ 1 kΩ Lead
VR = 10 V, 833 nm
S_R Sensitivity
@ Peak
λ_range Spectral Application Range
400
λ_p Spectral Response - Peak
V_BR Breakdown Voltage
40
θ_1/2 Angular Resp.-50% Resp. Pt.
NEP Noise Equivalent Power
D* Specific Detectivity
VTD34
Typ.
70
.20
365
-2.0
2
60
50
0.60
900
±50
4.8 x 10^-14
5.7 x 10¹²
UNITS
Max.
µA
%/°C
mV
mV/°C
30
nA
pF
nsec
A/W
1100
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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