VTD31AA Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – Alternate Source/ Second Source Photodiodes

Alternate Source/
Second Source Photodiodes
VTD31AA
(CLD31AA INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead
ceramic substrate and coated with a thick layer of
clear epoxy. These diodes exhibit low dark current
under reverse bias and fast speed of response.
CASE 13 CERAMIC
CHIP ACTIVE AREA: .026 in² (16.73 mm²)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
I_SC Short Circuit Current
H = 5 mW/cm², 2850 K
150
TC I_SC
V_OC
I_SC Temperature Coefficient
Open Circuit Voltage
2850 K
H = 5 mW/cm², 2850 K
TC V_OC V_OC Temperature Coefficient
2850 K
I_D
Dark Current
H = 0, V_R = 15 V
C_J Junction Capacitance
H = 0, V = 0 V
S_R Sensitivity
@ Peak
λ_range Spectral Application Range
400
λ_p Spectral Response - Peak
V_BR Breakdown Voltage
5
θ_1/2 Angular Resp.-50% Resp. Pt.
VTD31AA
Typ.
.20
350
-2.0
.55
860
±60
UNITS
Max.
225
µA
%/°C
mV
mV/°C
50
nA
500
pF
A/W
1150
nm
nm
V
Degrees
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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