VTB8440B Datasheet, PDF (1/1 Pages) PerkinElmer Optoelectronics – VTB Process Photodiodes

VTB Process Photodiodes
VTB8440B, 8441B
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic
package. The package incorporates an infrared
rejection filter. These diodes have very high
shunt resistance and have good blue response.
CASE 21F 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in² (5.16 mm²)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
I_SC
TC I_SC
V_OC
TC V_OC
I_D
R_SH
TC R_SH
C_J
λ_range
λ_p
V_BR
θ_1/2
NEP
D*
Short Circuit Current
I_SC Temperature Coefficient
Open Circuit Voltage
V_OC Temperature Coefficient
Dark Current
Shunt Resistance
R_SH Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
VTB8440B
Min. Typ. Max.
4
5
.02
.08
420
-2.0
2000
.07
-8.0
1.0
330
720
580
2
40
±50
1.1 x 10^-13 (Typ.)
2.2 x 10 ¹² (Typ.)
VTB8441B
Min. Typ. Max.
4
5
.02
.08
420
-2.0
100
1.4
-8.0
1.0
330
720
580
2
40
±50
2.4 x 10^-14 (Typ.)
9.7 x 10 ¹² (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: [phone] Fax: [phone] Web: www.perkinelmer.com/opto
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